Warmly celebrate the successful conclusion of the 3rd Power Semiconductor IGBT/SiC Industry Forum.

To drive innovative development in the IGBT power‑device and silicon‑carbide industries and to promote the cutting‑edge application of materials, equipment, and processing technologies, AB Semiconductor Network hosted the Third Power Semiconductor IGBT/SiC Industry Forum in Suzhou on July 5. The forum focused on key topics including market trends for IGBTs, SiCs, and other power semiconductors; chip design; module packaging; material innovation; process equipment and applications; as well as silicon‑carbide manufacturing stages such as single‑crystal growth, substrate preparation, and wafer slicing, grinding, and polishing. The event aimed to establish a professional, comprehensive platform for in‑depth collaboration, bringing together industry expertise to advance sector growth.

At this forum, 13 industry leaders delivered keynote presentations, while 14 cutting-edge companies showcased their solutions—including IGBT and SiC modules, chips, equipment, and materials—through dedicated exhibition booths. Next, let’s take a look back at the event through insights from the speakers, highlights from the exhibits, on-site interactions, and featured recaps.

I. Speaker(s)

1. “Silicon Carbide Modules Empowering the Decarbonization of Electric Drive Systems” — Zhao Manyuan, Product Marketing Manager, Semikron Danfoss

Semikron Danfoss is committed to becoming a global technology leader in the power electronics field, with products spanning semiconductor devices, power modules, module assemblies, and complete systems. At this forum, Zhao Manyuan, Product Manager for Semikron Danfoss, focused on “Silicon Carbide Solutions for Electric Drive Systems,” highlighting two key aspects: why silicon carbide is the preferred choice for electric drive applications, and Semikron Danfoss’s product‑level solutions. Under typical operating conditions, next‑generation silicon carbide offers distinct advantages in conduction losses, thermal management and package size, short‑circuit protection, system cost, and overall power efficiency. Overall, replacing IGBT modules with silicon carbide modules can reduce footprint, deliver higher output power, and better accommodate high‑speed applications. With 15 years of expertise in silicon carbide semiconductors, Semikron Danfoss has developed mature technologies in chip bonding, silver sintering, terminal welding, and other processes, which have been successfully deployed in large‑volume applications.

2. “Development and Application of Power Modules for Electric Vehicles,” Wang Min, R&D Manager, Zhixin Semiconductor

Zhixin Semiconductor is a joint venture established by Dongfeng Motor and CRRC, focusing on automotive‑grade power modules and primarily engaged in packaging and testing. At this forum, Wang Min, R&D Manager at Zhixin Semiconductor, presented on the development of electric vehicles, advances in Si IGBT and SiC MOSFET chip technologies, the evolution of power modules, and the research, development, and application of power modules for electric drives. The heart of new‑energy vehicle propulsion lies in the electric drive system; at the core of that system is the inverter; and at the heart of the inverter are power semiconductors. Manager Wang noted that SiC MOS structures are evolving from planar gates to trench gates, that overmolding represents the future trend in silicon carbide module packaging, and that the ceramic layer and the substrate solder layer have the greatest impact on thermal management. When deployed in 800V electric drive systems, SiC modules can boost efficiency by 4% and reduce electronic control losses by 70%. Zhixin Semiconductor boasts its own R&D team and proprietary patents; its silicon carbide modules entered mass production last year and offer customers a comprehensive, end‑to‑end solution.

3. “Surface Treatment Solutions for Heat Sinks” — Dong Pei, Asia Product Manager at Mecmesin

MedeMelois is a globally leading supplier of industrial metal and plastic surface‑treatment chemicals. Its proprietary chemical formulations enhance wear and corrosion resistance while also improving the aesthetic appeal of components. As demand for and ownership of electric vehicles continue to rise, EVs offer significant advantages over conventional internal‑combustion vehicles in terms of power and efficiency, particularly in thermal management. At this forum, Dong Pei, Asia Product Manager at MedeMelois, used the electric‑vehicle powertrain as a starting point to present solutions for power‑module thermal management, delivering a presentation that covered material selection, design, and surface‑treatment of heat sinks. With a strong focus on the R&D and production of specialty chemicals, MedeMelois stands as an industry‑leading company, offering unparalleled surface‑treatment and sintering/welding solutions.

4. “Application of Digital Twin–Based Lean Design in IGBT Chip Packaging and Device Structure–Thermal Management–Thermo-Mechanical R&D and Design” — Wang Ling, General Manager, Shanghai Jirui Industrial Design

Shanghai & Rui Industrial Design offers a customized, forward‑looking digital twin–based information solution for design and manufacturing collaboration. Driven by the miniaturization and high integration of chips, as well as the growing computational power and widespread adoption of AI, China’s chip industry is becoming increasingly competitive, with rising technical R&D challenges. Most domestic companies rely on experience and repeated physical trial-and-error in developing IGBT products, particularly in thermal management, reliability, and lifespan design—resulting in high material costs, subpar performance and reliability, and slow product‑iteration cycles. In response, General Manager Wang Ling outlined how digital twins can support lean R&D across these areas, proposing solutions such as failure analysis, lifespan and reliability control, assembly optimization, specialized simulation, and full‑lifecycle fatigue and lifetime prediction, thereby achieving cost reduction and efficiency gains.

5. “Testing Challenges and Solutions for Silicon Carbide (SiC) Power Semiconductor Modules,” Wang Cheng, Deputy General Manager, Pusais Instruments

As a provider of semiconductor electrical‑performance testing solutions, Pusais Instruments centers on digital source meters and addresses domestic‑supply needs, with a particular focus on power semiconductors. With the growing demands and specifications for silicon carbide module testing, there is an increasing need for higher precision and greater production capacity. Wang Cheng, Deputy General Manager of Pusais, discussed static testing of silicon carbide modules, including threshold‑voltage drift caused by instability mechanisms, electro‑thermal stress issues arising from package integration, and corresponding mitigation strategies, as well as the new challenges posed by emerging applications. Mr. Wang noted that electric vehicles will become the primary application domain for SiC over the next five years.

6. “Applications of Laser Technology in the Processing of Silicon Carbide Materials,” Wu Lijie, Technical Director at Han’s Laser Semiconductor

Founded in 2010, Dazhu Semiconductor specializes in laser‑cutting technology and is a wholly owned subsidiary of Dazhu Laser Group. The company focuses on developing processing, manufacturing, and vision‑inspection equipment for materials such as silicon, silicon carbide, gallium arsenide, gallium nitride, ceramics, and sapphire, covering stages from substrate fabrication to chip processing and packaging. At this forum, Wu Lijie, Dazhu’s Director of Technology, delivered a presentation centered on “The Application of Laser Technology in Silicon Carbide Material Processing.” Laser technology can be employed for hidden dicing, wafer slicing, modified‑dicing hole‑making, surface ablation, annealing, and dopant activation, among other processes. As silicon carbide wafer sizes expand from 6 inches to 8 inches, laser‑cutting techniques help address the limitations of conventional slicing—such as material loss, efficiency, and yield—enabling high‑precision, low‑damage wafer separation. In addition, Mr. Wu shared insightful insights into laser‑modified cutting, novel SDBG dicing, laser annealing, laser debonding, and related technologies and equipment.

7. “Key Equipment and Core Technologies for Power Semiconductor Packaging,” Dr. Liu Bin, Director of Technology R&D, Hefei Hengli Equipment

Hefei Hengli Equipment Co., Ltd. is affiliated with the 43rd Research Institute of China Electronics Technology Group Corporation. The company has developed four major equipment series—belt‑type furnaces, pusher‑plate furnaces, batch furnaces, and roller‑type furnaces—comprising more than fifty distinct equipment models, primarily serving four key industries: electronic components, metal heat treatment, new energy, and new materials. Liu Bo focused his presentation on critical equipment for chip and semiconductor packaging and interconnection, as well as for ceramic substrates. Key equipment for chips and semiconductors includes nano‑silver sintering systems, formic acid vacuum brazing machines, and vacuum reflow soldering systems; while equipment for ceramic substrates encompasses AMB vacuum brazing systems, DBC ceramic substrate‑specific machines, and HTCC industry‑specialized equipment, among others.

8. “Systematic Development of Sintered Packaging Materials and Novel Process Technologies for High-Power SiC Modules,” Professor Liu Yang, Harbin University of Science and Technology

Silicon carbide and gallium nitride wide-bandgap power semiconductors are flagship technologies for energy efficiency. However, due to the reliance on conventional packaging techniques and materials, early silicon carbide modules exhibited significantly lower reliability than their silicon‑based counterparts, with sintering technology emerging as a critical factor. Sintering materials include silver, copper, and silver–copper composite sintering materials, as well as transient liquid phase sintering materials. Professor Liu Yang highlighted several industry challenges associated with current chip‑level sintering interconnects: high costs of silver sintering materials, stringent process requirements, and oxidation issues in copper sintering. In addition, Professor Liu conducted a comparative analysis of the differences and advantages between copper and silver sintering, while also discussing the diversification of sintering processes and the systematic development of sintering material platforms.

9. “Stress Issues in the Growth of SiC Materials and Device Fabrication Processes,” Zhang Xuan, Associate Researcher, Fabrication Platform, Suzhou Institute of Nano‑Technology and Nanomaterials, Chinese Academy of Sciences

Mr. Zhang from the Fabrication Platform of the Suzhou Institute of Nanotech and Nanomaterials, Chinese Academy of Sciences, presented an overview of defects in silicon carbide single-crystal growth, cutting, grinding, polishing, epitaxial growth, and device fabrication. He then focused on the strain evolution and dislocation behavior of the 4H‑SiC polytype during processes such as ion implantation and annealing, as well as the degradation mechanisms of bipolar device performance and potential mitigation strategies. The Nanofabrication Platform at the Suzhou Institute of Nanotech and Nanomaterials, Chinese Academy of Sciences, operates a complete R&D process line for SiC power devices, equipped with SiC‑specific tools including projection lithography systems, high‑temperature ion implanters, gate‑oxide furnaces, and high‑temperature annealing ovens, and has also established automated I‑V testing equipment for SiC diodes. Mr. Zhang emphasized that thermal stress arising from temperature nonuniformity plays a decisive role in determining dislocation behavior within the structure of 4H‑SiC power devices.

10. “A Brief Analysis of the Development of Silicon Carbide Single-Crystal Substrate Materials,” by Ma Kangfu, Assistant to the General Manager, ShuoKe Crystals

ShuoKe Crystal is a leading domestic enterprise engaged in the production and R&D of third‑generation semiconductor material—silicon carbide. It has established a complete production line covering silicon carbide powder preparation, single‑crystal growth, and wafer processing, and was the first in China to successfully master the key technologies for high‑purity semi‑insulating silicon carbide single‑crystal substrates in 4‑, 6‑, and 8‑inch sizes. General Manager Ma compared SiC MOSFETs with silicon‑based power transistors, noting that silicon carbide devices are better suited for medium‑ and high‑voltage applications; however, cost constraints have thus far limited the broader adoption of SiC. That said, silicon carbide holds significant future potential in markets such as photovoltaic power generation and electric‑vehicle traction systems. Subsequently, General Manager Ma outlined advancements in the manufacturing processes for silicon carbide powder synthesis, single‑crystal growth, and wafer processing. Currently, ShuoKe Crystal has achieved an annual production capacity of 300,000 6‑inch silicon carbide substrates.

11. “Analysis of Cutting Processes for Large-Size Silicon Carbide Crystals” — Lian Qiang, General Manager of the Semiconductor Wire Sawing Division, Lian Qiang Semiconductor

Mr. Wu, General Manager of Lianqiang Semiconductor, provided an overview of domestic trends in the silicon carbide industry, the crystal structure of silicon carbide, the current state of wafer‑slicing processes, emerging R&D directions in slicing technology, and Lianqiang’s silicon carbide processing equipment. He forecast that 8‑inch silicon carbide substrates will follow a development trajectory similar to that of 4‑ to 6‑inch wafers, with technological maturity expected in approximately four years and gradual volume production by 2025. The high difficulty of silicon carbide cutting is linked to its crystal structure, hardness, and brittleness; currently, the primary methods are slurry sawing, diamond‑wire sawing, and laser cutting. Mr. Wu compared these three techniques in terms of their current status, advantages and disadvantages, and R&D priorities, concluding that slurry sawing holds a clear edge for 6‑inch silicon carbide wafers, while for 8‑inch wafers, slurry sawing and laser cutting are likely to coexist and evolve in parallel. Lianqiang Semiconductor supplies equipment such as dicing machines, rounding machines, and slicing machines to the silicon carbide processing sector.

12. “Key Technologies in the Packaging of Silicon Carbide Power Modules” — Zhu Zhengyu, Chairman and General Manager of Chixin Micro

As downstream demand for power density continues to grow, packaging‑module materials and processes must undergo continuous iteration. Compared with silicon‑based devices, silicon carbide modules offer advantages such as a wider bandgap, a 30%–50% reduction in volume, and a 60%–80% decrease in power loss; however, their high hardness also makes packaging more challenging. Currently, there are four primary avenues of technological advancement: transitioning interconnect technologies from solder to sintered silver—where the key lies in internal interconnections; incorporating ceramic substrates such as DBC or AMB into the frame; upgrading wire bonding from aluminum to thicker copper wires; and shifting from potting to overmolding, with critical considerations including warpage simulation, parasitic inductance, insulation issues, and thermal resistance. Moreover, third‑generation semiconductors are seeing ongoing innovations in reliability testing. Chixinwei is committed to becoming a leading domestic supplier of automotive SiC modules, adopting an integrated, multi‑pronged strategy that encompasses research on packaging materials, EDA‑driven packaging methodologies, process development, and reliability assessment.

13. “Applications of Ultrafast Laser Technology in the Processing, Cutting, and Annealing of Silicon Carbide” — Professor Xuewen Wang, Wuhan University of Technology

Professor Wang of Wuhan University of Technology primarily presented on three topics: ultrafast laser technology, silicon carbide semiconductors, and the applications of ultrafast lasers in the processing, polishing, and annealing of silicon carbide. Lasers are continually advancing toward higher energy, shorter pulse durations, and greater power. Ultrafast lasers are characterized by pulse widths that are significantly shorter than the time required for a system to reach thermal equilibrium after excitation, and they can be categorized into picosecond and femtosecond regimes. In the field of silicon carbide semiconductors, ultrafast lasers are predominantly employed for surface and subsurface slicing of ingots, substrate polishing, and ultrafast laser annealing. Wuhan University of Technology has invested in establishing laser‑processing application R&D centers in both Wuhan and Foshan, where it has developed high‑speed, high‑precision femtosecond laser lithography systems, nano‑3D printing equipment, and ultrafast laser annealing platforms, among others.