Multi-wire SemiconductorSlicing Machine
Technical Specifications
Key Technical Specifications
| Diameter of the workpiece | 8 inches / 12 inches |
| Length of the workpiece | ≤450mm, expandable to 600mm |
| Maximum linear velocity | 35m/s |
| Steel wire busbar diameter | ≥0.05mm |
| TTV | Average ≤ 6 μm |
| Bow | Average value ≤ ±8 μm |
| Warp | Average ≤ 10 μm |
| Yield rate | ≥98% |
| Drop rate | ≤1% (excluding non-equipment-related factors) |
| Total equipment power | 130kW/150kW |
| Equipment weight | 15.6t |
| Equipment external dimensions | 4750x1950x3000mm |
Measured data from the 12-inch semiconductor silicon ingot client-side test

Equipment Advantages
1. The tension sensor offers high control accuracy. 2. Patented auxiliary slurry pipe technology, with independent control of primary and secondary flow rates; 3. Low-inertia, lightweight integrated through‑hub design; the assembly is easy to replace. 4. The system employs a German-imported Siemens motion control system and motors. 5. The surface quality of silicon wafers— including TTV, line marks, and warp— is well controlled. 6. The equipment is specifically designed and manufactured for semiconductor crystal processing; it is not a photovoltaic retrofit machine. 7. Front-end material feeding method, easy to operate, and capable of being upgraded to automated feeding; 8. The tension arm is lightweight and has a short suspension length, resulting in a cable‑laying angle close to 90°, which facilitates cable‑laying control. 9. The wire take-up and pay-off system is positioned on both sides of the equipment and mounted on an integrally cast base, ensuring structural stability. 10. The equipment base, spindle housing support, cable guide, and wire take-up/reel support are all integrally cast structures. | ![]() |
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