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Automatic Thinning Machine

LQAG310/LQAG210

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SiC Equipment

InP/GaAs Equipment

Silicon Equipment

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Keywords：Automatic Thinning Machine

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0510-68106702

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Technical Specifications

Main Technical Specifications

Wafer diameter		mm	Ø300 and below; large sizes available upon request.
Grinding method			In-feed, Taiko, Creep
Air spindle	Rated power	kilowatt	5.8/11
	Rotational speed	rpm	1000-6000/1000-4000
	Minimum Z-axis displacement	micrometer	0.1
	Z-axis resolution	micrometer	0.05
Online measuring instrument	Measurement range	micrometer	0-4000
	Resolution	micrometer	0.1
	Repeatability	micrometer	±0.5
Film holder	Carrier stage type		Porous ceramic wafer holder, customizable
	Mounting method		Vacuum adsorption
	Rotational speed	rpm	0-300
Machining accuracy	Thickness variation within the wafer	micrometer	≤2.5
	Thickness variation between wafers	micrometer	≤2.5
	Fine grinding roughness	micrometer	Ra 0.02 (#2000 silicon-based grinding)
Equipment	External dimensions W×D×H	mm	86017851800
Equipment	Weight	Kilogram	1690

Equipment Advantages

Uniaxial automatic thinning machine suitable for processing a variety of semiconductor materials.

1. Specializes in thinning processes for semiconductor materials such as silicon, gallium arsenide, silicon carbide, epoxy resin, lithium niobate, and sapphire. 2. The equipment features a single‑axis, single‑station design with a compact footprint; it supports in‑feed, taiko, and creep grinding, as well as the thinning of irregularly shaped wafers or custom‑sized substrates.